The comparison of modern SiC power devices

The comparison of modern SiC power devices

A comparative study on high voltage MOSFET and IGBT devices (internal cell electrical characteristics) demonstrate the similarity of both devices. This paper presents an analysis of the static and dynamic behavior of a 2 kV SiC MOSFET and IGBT. The IGBT can block voltages up to 1800 V (for V/sub GS/...

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Bibliographische Detailangaben
Hauptverfasser: Avram, M., Brezeanu, G., Poenar, D.P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Applied sciences
Bipolar transistors
Computer science
control theory
systems
Conductivity
Exact sciences and technology
Insulated gate bipolar transistors
MOSFET circuits
Power dissipation
Power MOSFET
Semiconductor materials
Silicon carbide
Substrates
Voltage
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Beschreibung
Zusammenfassung:A comparative study on high voltage MOSFET and IGBT devices (internal cell electrical characteristics) demonstrate the similarity of both devices. This paper presents an analysis of the static and dynamic behavior of a 2 kV SiC MOSFET and IGBT. The IGBT can block voltages up to 1800 V (for V/sub GS/=-80 V), with a specific on-resistance as low as 13 mWcm/sup 2/, 100 - 200 lower than similar IGBT on Si. Comparing the circuit performance to that of a SiC IGBT, it turns out is almost twice faster than the MOSFET.
DOI:10.1109/ICIT.2004.1490341