A novel operation method to avoid overerasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programming

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 2006-04, Vol.53 (4), p.808-814
Hauptverfasser:	TSAI, Wen-Jer, ZOUS, Nian-Kai, TAHUI WANG, KU, Yen-Hui Joseph, LU, Chih-Yuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Magnetic and optical mass memories Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information
Online-Zugang:	Volltext
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