A 10 Gbit/s Si CMOS transimpedance amplifier with an integrated MSM photodetector for optical interconnections

A wideband preamplifier is designed and fabricated using a 0.18 /spl mu/m CMOS technology. The amplifier is heterogeneously integrated with a thin film InGaAs inverted MSM photodetector, and a successful demonstration at a bit rate of 10 Gbps is reported.

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Bibliographische Detailangaben
Hauptverfasser:	Indal Song, Sang-Woo Seo, Seokhun Hyun, Daeik Kim, Sa Huang, Brooke, M., Jokerst, N.M., Brown, A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Broadband amplifiers Circuit properties CMOS technology Compound structure devices Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Indium gallium arsenide Integrated circuits Optical amplifiers Optical interconnections Photodetectors Preamplifiers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor optical amplifiers Systems, networks and services of telecommunications Telecommunications Telecommunications and information theory Transistors Transmission and modulation (techniques and equipments) Wideband
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Beschreibung
Zusammenfassung:	A wideband preamplifier is designed and fabricated using a 0.18 /spl mu/m CMOS technology. The amplifier is heterogeneously integrated with a thin film InGaAs inverted MSM photodetector, and a successful demonstration at a bit rate of 10 Gbps is reported.
DOI:	10.1109/LEOS.2004.1363340