Fabrication of InGaN multi-quantum-well nanorod by Ni nano-mask

In this article, a novel method to fabricate high-density InGaN/GaN MQW nanorods by ICP-RIE dry etching technique using self-assembled nickel (Ni) nano-masks is reported.

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Bibliographische Detailangaben
Hauptverfasser:	HUANG, Hung-Wen, HSUEH, Tao-Hung, KAO, Chih-Chiang, CHANG, Ya-Hsien, OU-YANG, Miaochia, KUO, Hao-Chung, WANG, Shine-Chime
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Chemical vapor deposition Dry etching Electronics Exact sciences and technology Fabrication Gallium nitride Materials Microelectronic fabrication (materials and surfaces technology) Nanoscale devices Nickel Quantum well devices Scanning electron microscopy Self-assembly Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature
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Beschreibung
Zusammenfassung:	In this article, a novel method to fabricate high-density InGaN/GaN MQW nanorods by ICP-RIE dry etching technique using self-assembled nickel (Ni) nano-masks is reported.
DOI:	10.1109/LEOS.2004.1363224