N–p–n bipolar-junction-transistor detector with integrated p–n–p biasing transistor—feasibility study, design and first experimental results

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Bibliographische Detailangaben
Veröffentlicht in:	Semiconductor science and technology 2006-02, Vol.21 (2), p.194-200
Hauptverfasser:	Verzellesi, Giovanni, Bergamini, Davide, Dalla Betta, Gian-Franco, Piemonte, Claudio, Boscardin, Maurizio, Bosisio, Luciano, Bettarini, Stefano, Batignani, Giovanni
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Compound structure devices Electronics Exact sciences and technology Optoelectronic devices Other multijunction devices. Power transistors. Thyristors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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