Three-dimensional potential distribution model in channel of small geometry MOSFET with Gauss impurity distribution
In this paper the original three-dimensional potential distribution model in the channel of a small geometry MOSFET with Gauss impurity distribution is developed. By using the proposed model, simulations were performed. Obtained results are graphically presented and discussed. This model can be used...
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| creator | Ramovic, R. Krijestorac, S. Lukic, P. |
| description | In this paper the original three-dimensional potential distribution model in the channel of a small geometry MOSFET with Gauss impurity distribution is developed. By using the proposed model, simulations were performed. Obtained results are graphically presented and discussed. This model can be used for small-geometry MOSFET parameters optimization. |
| doi_str_mv | 10.1109/ICMEL.2004.1314624 |
| format | Conference Proceeding |
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By using the proposed model, simulations were performed. Obtained results are graphically presented and discussed. This model can be used for small-geometry MOSFET parameters optimization.</description><identifier>ISBN: 0780381661</identifier><identifier>ISBN: 9780780381667</identifier><identifier>DOI: 10.1109/ICMEL.2004.1314624</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Applied sciences ; Boundary conditions ; Electronics ; Equations ; Exact sciences and technology ; Gaussian channels ; Gaussian distribution ; Geometry ; Impurities ; Integrated circuit modeling ; MOSFET circuits ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Solid modeling ; Threshold voltage ; Transistors</subject><ispartof>2004 24th International Conference on Microelectronics (IEEE Cat. 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No.04TH8716)</title><addtitle>ICMEL</addtitle><description>In this paper the original three-dimensional potential distribution model in the channel of a small geometry MOSFET with Gauss impurity distribution is developed. By using the proposed model, simulations were performed. Obtained results are graphically presented and discussed. This model can be used for small-geometry MOSFET parameters optimization.</description><subject>Applied sciences</subject><subject>Boundary conditions</subject><subject>Electronics</subject><subject>Equations</subject><subject>Exact sciences and technology</subject><subject>Gaussian channels</subject><subject>Gaussian distribution</subject><subject>Geometry</subject><subject>Impurities</subject><subject>Integrated circuit modeling</subject><subject>MOSFET circuits</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Solid modeling</subject><subject>Threshold voltage</subject><subject>Transistors</subject><isbn>0780381661</isbn><isbn>9780780381667</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkEFLwzAUxwMiqHNfQC-5eGxN0iZNjzLmHHTs4DyPNH2xkTYtSYbs2xuYIL7L-8H__36Hh9ADJTmlpH7ernbrJmeElDktaClYeYXuSCVJIakQ9AYtQ_giaYqalzW7ReHQe4CssyO4YCenBjxPEVy0iToborftKaYAj1MHA7YO6145l3AyOIxqGPAnTCNEf8a7_fvr-oC_bezxRp1CwHacT97G8z_VPbo2agiw_N0L9JHOVm9Zs99sVy9NZmnBYyZJpw3nkjPBgRrNeUdaqnXNEkswLRVSEW1IB5RrA0qTCiRXLRMVByDFAj1dvLMKWg3GK6dtOM7ejsqfj7RK5pKJ1Hu89CwA_MWX_xU_d8ppUw</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>Ramovic, R.</creator><creator>Krijestorac, S.</creator><creator>Lukic, P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>IQODW</scope></search><sort><creationdate>2004</creationdate><title>Three-dimensional potential distribution model in channel of small geometry MOSFET with Gauss impurity distribution</title><author>Ramovic, R. ; Krijestorac, S. ; Lukic, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i135t-80dcf5585265e1fc55d0b1cc92fc58efb168a0cf0de15cfeac07e85ab2675ee03</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Applied sciences</topic><topic>Boundary conditions</topic><topic>Electronics</topic><topic>Equations</topic><topic>Exact sciences and technology</topic><topic>Gaussian channels</topic><topic>Gaussian distribution</topic><topic>Geometry</topic><topic>Impurities</topic><topic>Integrated circuit modeling</topic><topic>MOSFET circuits</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Solid modeling</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Ramovic, R.</creatorcontrib><creatorcontrib>Krijestorac, S.</creatorcontrib><creatorcontrib>Lukic, P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ramovic, R.</au><au>Krijestorac, S.</au><au>Lukic, P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Three-dimensional potential distribution model in channel of small geometry MOSFET with Gauss impurity distribution</atitle><btitle>2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)</btitle><stitle>ICMEL</stitle><date>2004</date><risdate>2004</risdate><volume>1</volume><spage>307</spage><epage>310 vol.1</epage><pages>307-310 vol.1</pages><isbn>0780381661</isbn><isbn>9780780381667</isbn><abstract>In this paper the original three-dimensional potential distribution model in the channel of a small geometry MOSFET with Gauss impurity distribution is developed. By using the proposed model, simulations were performed. Obtained results are graphically presented and discussed. This model can be used for small-geometry MOSFET parameters optimization.</abstract><cop>Piscataway NJ</cop><pub>IEEE</pub><doi>10.1109/ICMEL.2004.1314624</doi></addata></record> |
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| identifier | ISBN: 0780381661 |
| ispartof | 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716), 2004, Vol.1, p.307-310 vol.1 |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Applied sciences Boundary conditions Electronics Equations Exact sciences and technology Gaussian channels Gaussian distribution Geometry Impurities Integrated circuit modeling MOSFET circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid modeling Threshold voltage Transistors |
| title | Three-dimensional potential distribution model in channel of small geometry MOSFET with Gauss impurity distribution |
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