Three-dimensional potential distribution model in channel of small geometry MOSFET with Gauss impurity distribution

Three-dimensional potential distribution model in channel of small geometry MOSFET with Gauss impurity distribution

In this paper the original three-dimensional potential distribution model in the channel of a small geometry MOSFET with Gauss impurity distribution is developed. By using the proposed model, simulations were performed. Obtained results are graphically presented and discussed. This model can be used...

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Bibliographische Detailangaben
Hauptverfasser: Ramovic, R., Krijestorac, S., Lukic, P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Applied sciences
Boundary conditions
Electronics
Equations
Exact sciences and technology
Gaussian channels
Gaussian distribution
Geometry
Impurities
Integrated circuit modeling
MOSFET circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solid modeling
Threshold voltage
Transistors
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Beschreibung
Zusammenfassung:In this paper the original three-dimensional potential distribution model in the channel of a small geometry MOSFET with Gauss impurity distribution is developed. By using the proposed model, simulations were performed. Obtained results are graphically presented and discussed. This model can be used for small-geometry MOSFET parameters optimization.
DOI:10.1109/ICMEL.2004.1314624