A polar modulator transmitter for EDGE

This 0.5 /spl mu/m SiGe BiCMOS polar modulator IC adds EDGE transmit capability to a GSM transceiver IC without any RF filters. The modulator achieves phase noise of -152 dBc/Hz and -164 dBc/Hz at 10 MHz and 20 MHz, respectively, with a measured EVM of 3%. The IC consumes 55 mA and 75 mA at 2.7 V fo...

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Bibliographische Detailangaben
Hauptverfasser:	Elliott, M., Montalvo, T., Murden, F., Jeffries, B., Strange, J., Atkinson, S., Hill, A., Nandipaku, S., Harrebek, J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences BiCMOS integrated circuits Circuit properties Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Filters Germanium silicon alloys GSM Phase modulation Radio frequency Radiofrequency integrated circuits Signal convertors Silicon germanium Transceivers Transmitters
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Beschreibung
Zusammenfassung:	This 0.5 /spl mu/m SiGe BiCMOS polar modulator IC adds EDGE transmit capability to a GSM transceiver IC without any RF filters. The modulator achieves phase noise of -152 dBc/Hz and -164 dBc/Hz at 10 MHz and 20 MHz, respectively, with a measured EVM of 3%. The IC consumes 55 mA and 75 mA at 2.7 V for GSM and EDGE, respectively.
ISSN:	0193-6530 2376-8606
DOI:	10.1109/ISSCC.2004.1332658