A 10 GHz dielectric resonator oscillator using GaN technology

A 10 GHz AlGaN/GaN HEMT-based dielectric resonator oscillator (DRO) is presented. This device exhibits -118dBc/Hz phase noise at 100KHz offset frequency range and is the lowest yet reported. This phase noise and power capabilities of GaN HEMT oscillators are compared to those of two mature technolog...

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Bibliographische Detailangaben
Hauptverfasser:	Rice, P., Moore, M., Barnes, A.R., Uren, M.J., Malbert, N., Labat, N., Sloan, R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Applied sciences Circuit properties Dielectrics Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Frequency Gallium arsenide Gallium nitride HEMTs Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Oscillators Oscillators, resonators, synthetizers Phase noise PHEMTs Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanium Superconducting devices Transistors
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