A 10 GHz dielectric resonator oscillator using GaN technology

A 10 GHz dielectric resonator oscillator using GaN technology

A 10 GHz AlGaN/GaN HEMT-based dielectric resonator oscillator (DRO) is presented. This device exhibits -118dBc/Hz phase noise at 100KHz offset frequency range and is the lowest yet reported. This phase noise and power capabilities of GaN HEMT oscillators are compared to those of two mature technolog...

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Bibliographische Detailangaben
Hauptverfasser: Rice, P., Moore, M., Barnes, A.R., Uren, M.J., Malbert, N., Labat, N., Sloan, R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum gallium nitride
Applied sciences
Circuit properties
Dielectrics
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Frequency
Gallium arsenide
Gallium nitride
HEMTs
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Oscillators
Oscillators, resonators, synthetizers
Phase noise
PHEMTs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon germanium
Superconducting devices
Transistors
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Beschreibung
Zusammenfassung:A 10 GHz AlGaN/GaN HEMT-based dielectric resonator oscillator (DRO) is presented. This device exhibits -118dBc/Hz phase noise at 100KHz offset frequency range and is the lowest yet reported. This phase noise and power capabilities of GaN HEMT oscillators are compared to those of two mature technologies, an Infineon SiGe HBT (BFP620) and Transcom GaAs pHEMT (TC1401). The oscillator output power density using a GaN HEMT was found to be 14 times greater than using an equivalent GaAs pHEMT. Phase noise improvements between two different GaN devices, resulting from developments in GaN technology, are also presented.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2004.1338858