Flexible substrate micro-crystalline silicon and gated amorphous silicon strain sensors
We present two different kinds of semiconductor strain sensors: ungated n+ micro-crystalline silicon (n+ /spl mu/C-Si), and gated hydrogenated amorphous silicon (a-Si:H). Both sensor types are fabricated on flexible polyimide substrates. The sensors were characterized with bending perpendicular, par...
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| Veröffentlicht in: | IEEE transactions on electron devices 2006-02, Vol.53 (2), p.380-385 |
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| container_title | IEEE transactions on electron devices |
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| creator | Lisong Zhou Soyoun Jung Brandon, E. Jackson, T.N. |
| description | We present two different kinds of semiconductor strain sensors: ungated n+ micro-crystalline silicon (n+ /spl mu/C-Si), and gated hydrogenated amorphous silicon (a-Si:H). Both sensor types are fabricated on flexible polyimide substrates. The sensors were characterized with bending perpendicular, parallel, and at 45/spl deg/ with respect to the sensor bias direction, and for several bending diameters. Sensor size and power consumption are significantly reduced compared to metallic foil strain sensors. Small sensor size and ease of integration with a-Si:H thin-film transistors also allows arrays of strain sensors or combinations of strain sensors with varying geometric orientation to allow strain direction as well as magnitude to be unambiguously determined. |
| doi_str_mv | 10.1109/TED.2005.861727 |
| format | Article |
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Both sensor types are fabricated on flexible polyimide substrates. The sensors were characterized with bending perpendicular, parallel, and at 45/spl deg/ with respect to the sensor bias direction, and for several bending diameters. Sensor size and power consumption are significantly reduced compared to metallic foil strain sensors. Small sensor size and ease of integration with a-Si:H thin-film transistors also allows arrays of strain sensors or combinations of strain sensors with varying geometric orientation to allow strain direction as well as magnitude to be unambiguously determined.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2005.861727</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amorphous semiconductors ; Amorphous silicon ; Applied sciences ; Arrays ; Bending ; Electronics ; Exact sciences and technology ; Flexible electronics ; Foils ; General equipment and techniques ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Physics ; semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductors ; Sensors ; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing ; Silicon ; Silicon substrates ; Strain ; Strain measurement ; strain sensors ; Thin film transistors ; thin films ; thin-film transistors (TFTs) ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.380-385</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2006</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c427t-68780bc6c4dc3b0db456c8abce59e2555249b9837eee3957d1c909ed9b2ad97e3</citedby><cites>FETCH-LOGICAL-c427t-68780bc6c4dc3b0db456c8abce59e2555249b9837eee3957d1c909ed9b2ad97e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1580877$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1580877$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17445544$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Lisong Zhou</creatorcontrib><creatorcontrib>Soyoun Jung</creatorcontrib><creatorcontrib>Brandon, E.</creatorcontrib><creatorcontrib>Jackson, T.N.</creatorcontrib><title>Flexible substrate micro-crystalline silicon and gated amorphous silicon strain sensors</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>We present two different kinds of semiconductor strain sensors: ungated n+ micro-crystalline silicon (n+ /spl mu/C-Si), and gated hydrogenated amorphous silicon (a-Si:H). Both sensor types are fabricated on flexible polyimide substrates. The sensors were characterized with bending perpendicular, parallel, and at 45/spl deg/ with respect to the sensor bias direction, and for several bending diameters. Sensor size and power consumption are significantly reduced compared to metallic foil strain sensors. Small sensor size and ease of integration with a-Si:H thin-film transistors also allows arrays of strain sensors or combinations of strain sensors with varying geometric orientation to allow strain direction as well as magnitude to be unambiguously determined.</description><subject>Amorphous semiconductors</subject><subject>Amorphous silicon</subject><subject>Applied sciences</subject><subject>Arrays</subject><subject>Bending</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Flexible electronics</subject><subject>Foils</subject><subject>General equipment and techniques</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Physics</subject><subject>semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductors</subject><subject>Sensors</subject><subject>Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>Strain</subject><subject>Strain measurement</subject><subject>strain sensors</subject><subject>Thin film transistors</subject><subject>thin films</subject><subject>thin-film transistors (TFTs)</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc9LwzAcxYMoOKdnD16KoJ66Jc3vo8xNhYGXiceQpplmpO1MWnD_vRkdCh48fQnv877kfR8AlwhOEIJyupo_TAoI6UQwxAt-BEaIUp5LRtgxGEGIRC6xwKfgLMZNejJCihF4W3j75Upvs9iXsQu6s1ntTGhzE3ax0967JmnOO9M2mW6q7D0hVabrNmw_2j7-aHuzS8M2sQ3xHJystY_24jDH4HUxX82e8uXL4_PsfpkbUvAuZ4ILWBpmSGVwCauSUGaELo2l0haU0oLIUgrMrbVYUl4hI6G0lSwLXUlu8RjcDXu3of3sbexU7aKx3uvGpt8pIVJowRFL5O2_ZCEgZFTiBF7_ATdtH5qUQglGEWMYygRNByidKsZg12obXK3DTiGo9n2o1Ifa96GGPpLj5rBWR6P9OujGuPhr44RQSkjirgbOpcy_MhVQcI6_ASLVlD4</recordid><startdate>20060201</startdate><enddate>20060201</enddate><creator>Lisong Zhou</creator><creator>Soyoun Jung</creator><creator>Brandon, E.</creator><creator>Jackson, T.N.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20060201</creationdate><title>Flexible substrate micro-crystalline silicon and gated amorphous silicon strain sensors</title><author>Lisong Zhou ; Soyoun Jung ; Brandon, E. ; Jackson, T.N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c427t-68780bc6c4dc3b0db456c8abce59e2555249b9837eee3957d1c909ed9b2ad97e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Amorphous semiconductors</topic><topic>Amorphous silicon</topic><topic>Applied sciences</topic><topic>Arrays</topic><topic>Bending</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Flexible electronics</topic><topic>Foils</topic><topic>General equipment and techniques</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>Physics</topic><topic>semiconductor devices</topic><topic>Semiconductor electronics. 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Solid state devices</topic><topic>Semiconductors</topic><topic>Sensors</topic><topic>Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing</topic><topic>Silicon</topic><topic>Silicon substrates</topic><topic>Strain</topic><topic>Strain measurement</topic><topic>strain sensors</topic><topic>Thin film transistors</topic><topic>thin films</topic><topic>thin-film transistors (TFTs)</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lisong Zhou</creatorcontrib><creatorcontrib>Soyoun Jung</creatorcontrib><creatorcontrib>Brandon, E.</creatorcontrib><creatorcontrib>Jackson, T.N.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lisong Zhou</au><au>Soyoun Jung</au><au>Brandon, E.</au><au>Jackson, T.N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Flexible substrate micro-crystalline silicon and gated amorphous silicon strain sensors</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2006-02-01</date><risdate>2006</risdate><volume>53</volume><issue>2</issue><spage>380</spage><epage>385</epage><pages>380-385</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We present two different kinds of semiconductor strain sensors: ungated n+ micro-crystalline silicon (n+ /spl mu/C-Si), and gated hydrogenated amorphous silicon (a-Si:H). Both sensor types are fabricated on flexible polyimide substrates. The sensors were characterized with bending perpendicular, parallel, and at 45/spl deg/ with respect to the sensor bias direction, and for several bending diameters. Sensor size and power consumption are significantly reduced compared to metallic foil strain sensors. Small sensor size and ease of integration with a-Si:H thin-film transistors also allows arrays of strain sensors or combinations of strain sensors with varying geometric orientation to allow strain direction as well as magnitude to be unambiguously determined.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2005.861727</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.380-385 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| subjects | Amorphous semiconductors Amorphous silicon Applied sciences Arrays Bending Electronics Exact sciences and technology Flexible electronics Foils General equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Physics semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Sensors Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing Silicon Silicon substrates Strain Strain measurement strain sensors Thin film transistors thin films thin-film transistors (TFTs) Transistors |
| title | Flexible substrate micro-crystalline silicon and gated amorphous silicon strain sensors |
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