Flexible substrate micro-crystalline silicon and gated amorphous silicon strain sensors

We present two different kinds of semiconductor strain sensors: ungated n+ micro-crystalline silicon (n+ /spl mu/C-Si), and gated hydrogenated amorphous silicon (a-Si:H). Both sensor types are fabricated on flexible polyimide substrates. The sensors were characterized with bending perpendicular, parallel, and at 45/spl deg/ with respect to the sensor bias direction, and for several bending diameters. Sensor size and power consumption are significantly reduced compared to metallic foil strain sensors. Small sensor size and ease of integration with a-Si:H thin-film transistors also allows arrays of strain sensors or combinations of strain sensors with varying geometric orientation to allow strain direction as well as magnitude to be unambiguously determined.