Characterization on ESD devices with test structures in silicon germanium RF BiCMOS process

Different electrostatic discharge (ESD) devices in a 0.35-/spl mu/m silicon germanium (SiGe) RF BiCMOS process are characterized in detail by a transmission line pulse (TLP) generator and ESD simulator for on-chip ESD protection design. The test structures of diodes with different p-n junctions and...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KER, Ming-Dou, WU, Woei-Lin, CHANG, Chyh-Yih
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences BiCMOS integrated circuits Character generation Circuit properties Design. Technologies. Operation analysis. Testing Dielectric, amorphous and glass solid devices Electric, optical and optoelectronic circuits Electronic circuits Electronics Electrostatic discharge Exact sciences and technology Germanium silicon alloys Integrated circuits Oscillators, resonators, synthetizers Pulse generation Radio frequency Robustness Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanium Testing Testing, measurement, noise and reliability Transmission lines
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Different electrostatic discharge (ESD) devices in a 0.35-/spl mu/m silicon germanium (SiGe) RF BiCMOS process are characterized in detail by a transmission line pulse (TLP) generator and ESD simulator for on-chip ESD protection design. The test structures of diodes with different p-n junctions and the silicon-germanium heterojunction bipolar transistors (HBTs) with different layout parameters have been fabricated to investigate their ESD robustness. The human-body-model (HBM) ESD robustness of SiGe HBTs with the optional low-voltage (LV), high-voltage (HV), and high-speed (HS) implantations has been measured and compared in the experimental test chips.
DOI:	10.1109/ICMTS.2004.1309292