A PVD based barrier technology for the 45 nm node

A new PVD source for barrier deposition has been developed which is extendible down to the 45 nm node. The source can conformally deposit barrier metal on the sidewalls of vias and trenches. The thickness of the barrier on the via bottom can be minimized for lowest via resistance. Electrical tests o...

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Veröffentlicht in:	Microelectronic engineering 2005-12, Vol.82 (3), p.594-599
Hauptverfasser:	Forster, J., Gopalraja, P., Gung, T.J., Sundarrajan, A., Fu, X., Hammond, N., Fu, J., Kelkar, U., Bhatnagar, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Barrier metal Electronics Exact sciences and technology Metallization reliability Microelectronic fabrication (materials and surfaces technology) Physical vapor deposition Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Beschreibung
Zusammenfassung:	A new PVD source for barrier deposition has been developed which is extendible down to the 45 nm node. The source can conformally deposit barrier metal on the sidewalls of vias and trenches. The thickness of the barrier on the via bottom can be minimized for lowest via resistance. Electrical tests on typical back-end-of-line structures show line resistances consistent with measured trench sidewall coverage. Both stress migration and electro-migration performance are superior to previous generation PVD barrier sources.
ISSN:	0167-9317 1873-5568
DOI:	10.1016/j.mee.2005.07.062