Photocurrent and differential absorption spectra of InGaAsN single- and double-quantum-well structures grown by molecular beam epitaxy
We report the photocurrent and differential absorption spectra of an InGaAsN single- and a double-quantum-well (SQW and DQW) structure measured at different reverse bias. The DQW structure shows an additional enhancement in electroabsorption of a maximum /spl Delta//spl alpha/ /spl sim/ 14400 cm/sup...
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| creator | Lay, T.S. Shen, R.R. Lin, E.Y. Kong, K.M. Chen, L.R. Wang, J.S. Lin, G. Chi, J.Y. |
| description | We report the photocurrent and differential absorption spectra of an InGaAsN single- and a double-quantum-well (SQW and DQW) structure measured at different reverse bias. The DQW structure shows an additional enhancement in electroabsorption of a maximum /spl Delta//spl alpha/ /spl sim/ 14400 cm/sup -1/, which is 2.6 times larger than the maximum /spl Delta//spl alpha/ /spl sim/ 5400 cm/sup -1/ of the SQW sample. |
| doi_str_mv | 10.1109/ICIPRM.2004.1442706 |
| format | Conference Proceeding |
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The DQW structure shows an additional enhancement in electroabsorption of a maximum /spl Delta//spl alpha/ /spl sim/ 14400 cm/sup -1/, which is 2.6 times larger than the maximum /spl Delta//spl alpha/ /spl sim/ 5400 cm/sup -1/ of the SQW sample.</description><identifier>ISSN: 1092-8669</identifier><identifier>ISBN: 0780385950</identifier><identifier>ISBN: 9780780385955</identifier><identifier>DOI: 10.1109/ICIPRM.2004.1442706</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Absorption ; Applied sciences ; Chirp ; Electronics ; Exact sciences and technology ; Gallium arsenide ; Microelectronic fabrication (materials and surfaces technology) ; Molecular beam epitaxial growth ; Optical arrays ; Optical materials ; Optical surface waves ; Photoconductivity ; Plasma temperature ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The DQW structure shows an additional enhancement in electroabsorption of a maximum /spl Delta//spl alpha/ /spl sim/ 14400 cm/sup -1/, which is 2.6 times larger than the maximum /spl Delta//spl alpha/ /spl sim/ 5400 cm/sup -1/ of the SQW sample.</description><subject>Absorption</subject><subject>Applied sciences</subject><subject>Chirp</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Molecular beam epitaxial growth</subject><subject>Optical arrays</subject><subject>Optical materials</subject><subject>Optical surface waves</subject><subject>Photoconductivity</subject><subject>Plasma temperature</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Sun</subject><issn>1092-8669</issn><isbn>0780385950</isbn><isbn>9780780385955</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFkE1OwzAQhS0BEqX0BN14wzLFjp2_ZVVBiVSgQrCuxs64BCVxsB2VXoBzE1QkZvPmvflmFkPInLMF56y4LVfl9uVxETMmF1zKOGPpGbliWc5EnhQJOyeTEYujPE2LSzLz_oONJRM5hhPyvX23werBOewCha6iVW0M_roaGgrKW9eH2nbU96iDA2oNLbs1LP0T9XW3bzA6rdlBjf3nAF0Y2uiATUN9cIMOg0NP984eOqqOtLUN6qEBRxVCS7GvA3wdr8mFgcbj7E-n5O3-7nX1EG2e1-VquYn2sUxDlIlUa6WRZ0xmCrGQIjaZSoDnHESmKqWKSsiCV1WlpC7imKHBXCmjTAppIqbk5nS3B6-hMQ46Xftd7-oW3HHHMyGTuBAjNz9xNSL-j0_vFT8mEXL7</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>Lay, T.S.</creator><creator>Shen, R.R.</creator><creator>Lin, E.Y.</creator><creator>Kong, K.M.</creator><creator>Chen, L.R.</creator><creator>Wang, J.S.</creator><creator>Lin, G.</creator><creator>Chi, J.Y.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>IQODW</scope></search><sort><creationdate>2004</creationdate><title>Photocurrent and differential absorption spectra of InGaAsN single- and double-quantum-well structures grown by molecular beam epitaxy</title><author>Lay, T.S. ; Shen, R.R. ; Lin, E.Y. ; Kong, K.M. ; Chen, L.R. ; Wang, J.S. ; Lin, G. ; Chi, J.Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-g246t-736ccbce17047bee9432f7b5a181a37bdbb9d3491dddb4c9220efe8bbfbf6a653</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Absorption</topic><topic>Applied sciences</topic><topic>Chirp</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Molecular beam epitaxial growth</topic><topic>Optical arrays</topic><topic>Optical materials</topic><topic>Optical surface waves</topic><topic>Photoconductivity</topic><topic>Plasma temperature</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Sun</topic><toplevel>online_resources</toplevel><creatorcontrib>Lay, T.S.</creatorcontrib><creatorcontrib>Shen, R.R.</creatorcontrib><creatorcontrib>Lin, E.Y.</creatorcontrib><creatorcontrib>Kong, K.M.</creatorcontrib><creatorcontrib>Chen, L.R.</creatorcontrib><creatorcontrib>Wang, J.S.</creatorcontrib><creatorcontrib>Lin, G.</creatorcontrib><creatorcontrib>Chi, J.Y.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lay, T.S.</au><au>Shen, R.R.</au><au>Lin, E.Y.</au><au>Kong, K.M.</au><au>Chen, L.R.</au><au>Wang, J.S.</au><au>Lin, G.</au><au>Chi, J.Y.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Photocurrent and differential absorption spectra of InGaAsN single- and double-quantum-well structures grown by molecular beam epitaxy</atitle><btitle>16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004</btitle><stitle>ICIPRM</stitle><date>2004</date><risdate>2004</risdate><spage>278</spage><epage>280</epage><pages>278-280</pages><issn>1092-8669</issn><isbn>0780385950</isbn><isbn>9780780385955</isbn><abstract>We report the photocurrent and differential absorption spectra of an InGaAsN single- and a double-quantum-well (SQW and DQW) structure measured at different reverse bias. The DQW structure shows an additional enhancement in electroabsorption of a maximum /spl Delta//spl alpha/ /spl sim/ 14400 cm/sup -1/, which is 2.6 times larger than the maximum /spl Delta//spl alpha/ /spl sim/ 5400 cm/sup -1/ of the SQW sample.</abstract><cop>Piscataway NJ</cop><pub>IEEE</pub><doi>10.1109/ICIPRM.2004.1442706</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 1092-8669 |
| ispartof | 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.278-280 |
| issn | 1092-8669 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_17345293 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Absorption Applied sciences Chirp Electronics Exact sciences and technology Gallium arsenide Microelectronic fabrication (materials and surfaces technology) Molecular beam epitaxial growth Optical arrays Optical materials Optical surface waves Photoconductivity Plasma temperature Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sun |
| title | Photocurrent and differential absorption spectra of InGaAsN single- and double-quantum-well structures grown by molecular beam epitaxy |
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