Photocurrent and differential absorption spectra of InGaAsN single- and double-quantum-well structures grown by molecular beam epitaxy

We report the photocurrent and differential absorption spectra of an InGaAsN single- and a double-quantum-well (SQW and DQW) structure measured at different reverse bias. The DQW structure shows an additional enhancement in electroabsorption of a maximum /spl Delta//spl alpha/ /spl sim/ 14400 cm/sup...

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Hauptverfasser:	Lay, T.S., Shen, R.R., Lin, E.Y., Kong, K.M., Chen, L.R., Wang, J.S., Lin, G., Chi, J.Y.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Absorption Applied sciences Chirp Electronics Exact sciences and technology Gallium arsenide Microelectronic fabrication (materials and surfaces technology) Molecular beam epitaxial growth Optical arrays Optical materials Optical surface waves Photoconductivity Plasma temperature Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sun
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Zusammenfassung:	We report the photocurrent and differential absorption spectra of an InGaAsN single- and a double-quantum-well (SQW and DQW) structure measured at different reverse bias. The DQW structure shows an additional enhancement in electroabsorption of a maximum /spl Delta//spl alpha/ /spl sim/ 14400 cm/sup -1/, which is 2.6 times larger than the maximum /spl Delta//spl alpha/ /spl sim/ 5400 cm/sup -1/ of the SQW sample.
ISSN:	1092-8669
DOI:	10.1109/ICIPRM.2004.1442706