Evolution of materials technology for stacked-capacitors in 65 nm embedded-DRAM

The architecture, materials choice and process technology for stacked-capacitors in embedded-DRAM applications are a crucial concern for each new technology node. An overview of the evolution of capacitor technology is presented from the early days of planar PIS (poly/insulator/silicon) capacitors t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Solid-state electronics 2005, Vol.49 (11), p.1767-1775
Hauptverfasser:	Gerritsen, Eric, Emonet, Nicolas, Caillat, Christian, Jourdan, Nicolas, Piazza, Marc, Fraboulet, David, Boeck, Bruce, Berthelot, Audrey, Smith, Steven, Mazoyer, Pascale
Format:	Artikel
Sprache:	eng
Schlagworte:	ALD Applied sciences Atomic layer deposition Capacitor Dielectric Dielectric, amorphous and glass solid devices DRAM Electrode Electronics Exact sciences and technology High- k Integrated circuits Integrated circuits by function (including memories and processors) MIM Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!