Monte Carlo simulation of the contrast of SEM charge-collection images of dislocations in semiconductors

We describe a Monte Carlo algorithm that we have developed to simulate the electron beam induced current (EBIC) contrast of a surface perpendicular dislocation. The contrast was obtained by simulating the random diffusion and collection of the carriers that are generated at point-like sources Si randomly distributed within the generation volume. The dislocation is described as a cylinder with a radius rD where the minority carrier lifetime (tauD) is lower than that in the bulk (tauB).