High performance SOI technology for sub-45nm gate length CMOS manufacturing

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Hauptverfasser:	HORSTMANN, M, GREENLAW, D, SCHWAN, C, PETERS, C, LENSKI, M, PRESS, P, KAMMLER, Th, BIERSTEDT, H, OTTERBACH, R, NEU, A, WIECZOREK, K, SCHALLER, M, HUEBLER, P, SALZ, H, HOHAGE, J, RUELKE, H, KLAIS, J, GRASSHOFF, G, EHRICHS, E, GOAD, S, RAAB, M, KEPLER, N, STEPHAN, R, FEUDEL, Th, WEI, A, FROHBERG, K, HOENTSCHEL, J, JAVORKA, P, BURBACH, G
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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creator	HORSTMANN, M GREENLAW, D SCHWAN, C PETERS, C LENSKI, M PRESS, P KAMMLER, Th BIERSTEDT, H OTTERBACH, R NEU, A WIECZOREK, K SCHALLER, M HUEBLER, P SALZ, H HOHAGE, J RUELKE, H KLAIS, J GRASSHOFF, G EHRICHS, E GOAD, S RAAB, M KEPLER, N STEPHAN, R FEUDEL, Th WEI, A FROHBERG, K HOENTSCHEL, J JAVORKA, P BURBACH, G
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source	Institute of Physics Journals
subjects	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
title	High performance SOI technology for sub-45nm gate length CMOS manufacturing
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