Broadband highly bright radiation sources based on a superluminescent diode and a semiconductor optical amplifier
It is shown experimentally that the use of a travelling-wave semiconductor optical amplifier (SOA) significantly improves the output characteristics of a superluminescent diode (SLD), increasing, in particular, its output power or broadening its emission band. By using SOAs based on separate-confine...
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Veröffentlicht in: | Quantum electronics (Woodbury, N.Y.) N.Y.), 2005-06, Vol.35 (6), p.504-506 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | It is shown experimentally that the use of a travelling-wave semiconductor optical amplifier (SOA) significantly improves the output characteristics of a superluminescent diode (SLD), increasing, in particular, its output power or broadening its emission band. By using SOAs based on separate-confinement double (InGa)PAs heterostructures emitting at 1300 nm and different SLDs as input radiation sources, there were obtained up to 50 mW of cw power at the output of a single-mode fibre and the emission band with the half-width up to 70 nm. (lasers) |
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ISSN: | 1063-7818 1468-4799 |
DOI: | 10.1070/QE2005v035n06ABEH004096 |