Reverse active mode current characteristics of SiGe HBTs

Reverse active mode current characteristics of SiGe HBTs

The current characteristics of SiGe heterojunction bipolar transistors (HBTs) operating in the reverse active mode are investigated. It is experimentally shown that the I/sub C/ is identical for the reverse and the forward modes for arbitrary doping and Ge profiles across the base to first order. In...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on electron devices 2005-06, Vol.52 (6), p.1219-1222
Hauptverfasser: Jae-Sung Rieh, Jin Cai, Tak Ning, Stricker, A., Freeman, G.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Collectors
Current
Electric potential
Electronics
Exact sciences and technology
Germanium
Germanium alloys
Heterojunction bipolar transistors
heterojunction bipolar transistors (HBTs)
Integrated circuits
Modulation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon alloys
Silicon germanides
Transistors
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The current characteristics of SiGe heterojunction bipolar transistors (HBTs) operating in the reverse active mode are investigated. It is experimentally shown that the I/sub C/ is identical for the reverse and the forward modes for arbitrary doping and Ge profiles across the base to first order. In contrast, the impact of V/sub BE/ and V/sub CB/ modulation on I/sub C/ is opposite for the two modes, leading to a smaller Early voltage but more ideal collector current for the reverse mode.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2005.848869