A 130-nm 0.9-V 66-MHz 8-Mb (256K /spl times/ 32) local SONOS embedded flash EEPROM

In a 0.13-/spl mu/m CMOS logic compatible process, a 256K /spl times/ 32 bit (8 Mb) local SONOS embedded flash EEPROM was implemented using the ATD-assisted current sense amplifier (AACSA) for 0.9 V (0.7 /spl sim/ 1.4 V) low V/sub CC/ application. Read operation is performed at a high frequency of 6...

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Veröffentlicht in:	IEEE journal of solid-state circuits 2005-04, Vol.40 (4), p.877-883
Hauptverfasser:	SEO, Myoung-Kyu, SIM, Soung-Hoon, OH, Myoung-Hee, LEE, Hyo-Sang, KIM, Sang-Won, CHO, In-Wook, KIM, Gyu-Hong, KIM, Moon-Gone
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Arrays Circuit properties Circuits CMOS CMOS logic circuits CMOS process Compatibility Coring bits Design. Technologies. Operation analysis. Testing Digital circuits EEPROM Electric, optical and optoelectronic circuits Electronic circuits Electronics embedded flash memory Energy consumption EPROM Exact sciences and technology Flash memory Frequency High frequencies high frequency Integrated circuits Integrated circuits by function (including memories and processors) Logic devices Low currents low operating current program disturbance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SONOS devices System-on-a-chip Voltage
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Beschreibung
Zusammenfassung:	In a 0.13-/spl mu/m CMOS logic compatible process, a 256K /spl times/ 32 bit (8 Mb) local SONOS embedded flash EEPROM was implemented using the ATD-assisted current sense amplifier (AACSA) for 0.9 V (0.7 /spl sim/ 1.4 V) low V/sub CC/ application. Read operation is performed at a high frequency of 66 MHz and shows a low current of typically 5 mA at 66-MHz operating frequency. Program operation is performed for common source array with wide I/Os (/spl times/32) by using the data-dependent source bias control scheme (DDSBCS). This novel local SONOS embedded flash EEPROM core has the cell size of 0.276 /spl mu/m/sup 2/ (16.3 F/sup 2//bit) and the program and erase time of 20 /spl mu/s and 20 ms, respectively.
ISSN:	0018-9200 1558-173X
DOI:	10.1109/JSSC.2005.845564