Etching submicrometer trenches by using the Bosch process and its application to the fabrication of antireflection structures

This paper reports solutions to the issues of profile control, microloading effect and suppression of the sidewall roughness of submicrometer trenches by modifying the regular conditions of the Bosch process that is often employed in the inductively coupled plasma (ICP) deep reactive ion etching (DR...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of micromechanics and microengineering 2005-03, Vol.15 (3), p.580-585
Hauptverfasser:	Chang, Chienliu, Wang, Yeong-Feng, Kanamori, Yoshiaki, Shih, Ji-Jheng, Kawai, Yusuke, Lee, Chih-Kung, Wu, Kuang-Chong, Esashi, Masayoshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Instruments, apparatus, components and techniques common to several branches of physics and astronomy Mechanical engineering. Machine design Mechanical instruments, equipment and techniques Microelectronic fabrication (materials and surfaces technology) Micromechanical devices and systems Physics Precision engineering, watch making Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	This paper reports solutions to the issues of profile control, microloading effect and suppression of the sidewall roughness of submicrometer trenches by modifying the regular conditions of the Bosch process that is often employed in the inductively coupled plasma (ICP) deep reactive ion etching (DRIE) system. Additionally, under the modified processing conditions, a high efficient antireflection structure can be fabricated.
ISSN:	0960-1317 1361-6439
DOI:	10.1088/0960-1317/15/3/020