Single crystal growth of gallium nitride by slow-cooling of its congruent melt under high pressure

Bibliographische Detailangaben

Hauptverfasser:	SAITOH, Hiroyuki, UTSUMI, Wataru, KANEKO, Hiroshi, KIRIYAMA, Koji, AOKI, Katsutoshi
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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