A new low-power pMOS poly-Si inverter for AMDs

A new low-power inverter using only p-type poly-Si thin-film transistors for the driving circuits of active matrix liquid crystal displays and active matrix organic light-emitting diodes is proposed and fabricated. The proposed pMOS inverter using capacitive coupling and bootstrapping successfully e...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 2005-01, Vol.26 (1), p.23-25
Hauptverfasser:	JUNG, Sang-Hoon, NAM, Woo-Jin, LEE, Jae-Hoon, JEON, Jae-Hong, HAN, Min-Koo
Format:	Artikel
Sprache:	eng
Schlagworte:	Active matrix liquid crystal displays Active matrix organic light emitting diodes Active matrix technology Active-matrix display (AMD) Applied sciences boot-strapping CMOS technology Coupling circuits Display driving circuit Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Flat panel displays Inverters Liquid crystal displays Optoelectronic devices pMOS inverter poly-Si thin-film transistor (TFT) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thin film transistors Threshold voltage Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A new low-power inverter using only p-type poly-Si thin-film transistors for the driving circuits of active matrix liquid crystal displays and active matrix organic light-emitting diodes is proposed and fabricated. The proposed pMOS inverter using capacitive coupling and bootstrapping successfully eliminated the troublesome through current and exhibited a wide output swing from V/sub DD/ to V/sub SS/ without additional signals.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2004.839217