Low-threshold electron-beam-pumped green quantum-well heterostructure semiconductor lasers

The parameters of 494-555-nm Cd(Zn)Se/ZnMgSSe green lasers with differently designed active regions pumped by a 8-30-keV electron beam are studied. The minimum threshold current density (0.6-0.8 A cm{sup -2} at room temperature) is obtained for a structure with the active region consisting of a ZnSe...

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Veröffentlicht in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2004-10, Vol.34 (10), p.909-911
Hauptverfasser: Zverev, M M, Peregudov, D V, Sedova, I V, Sorokin, S V, Ivanov, S V, Kop'ev, P S
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Sprache:eng
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Zusammenfassung:The parameters of 494-555-nm Cd(Zn)Se/ZnMgSSe green lasers with differently designed active regions pumped by a 8-30-keV electron beam are studied. The minimum threshold current density (0.6-0.8 A cm{sup -2} at room temperature) is obtained for a structure with the active region consisting of a ZnSe quantum well with a CdSe fractional monolayer insertion. (lasers)
ISSN:1063-7818
1468-4799
DOI:10.1070/QE2004v034n10ABEH002752