Low-threshold electron-beam-pumped green quantum-well heterostructure semiconductor lasers
The parameters of 494-555-nm Cd(Zn)Se/ZnMgSSe green lasers with differently designed active regions pumped by a 8-30-keV electron beam are studied. The minimum threshold current density (0.6-0.8 A cm{sup -2} at room temperature) is obtained for a structure with the active region consisting of a ZnSe...
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Veröffentlicht in: | Quantum electronics (Woodbury, N.Y.) N.Y.), 2004-10, Vol.34 (10), p.909-911 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The parameters of 494-555-nm Cd(Zn)Se/ZnMgSSe green lasers with differently designed active regions pumped by a 8-30-keV electron beam are studied. The minimum threshold current density (0.6-0.8 A cm{sup -2} at room temperature) is obtained for a structure with the active region consisting of a ZnSe quantum well with a CdSe fractional monolayer insertion. (lasers) |
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ISSN: | 1063-7818 1468-4799 |
DOI: | 10.1070/QE2004v034n10ABEH002752 |