All-digital TX frequency synthesizer and discrete-time receiver for Bluetooth radio in 130-nm CMOS

We present a single-chip fully compliant Bluetooth radio fabricated in a digital 130-nm CMOS process. The transceiver is architectured from the ground up to be compatible with digital deep-submicron CMOS processes and be readily integrated with a digital baseband and application processor. The conve...

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Veröffentlicht in:IEEE journal of solid-state circuits 2004-12, Vol.39 (12), p.2278-2291
Hauptverfasser: Staszewski, R.B., Muhammad, K., Leipold, D., Chih-Ming Hung, Yo-Chuol Ho, Wallberg, J.L., Fernando, C., Maggio, K., Staszewski, R., Jung, T., Jinseok Koh, John, S., Irene Yuanying Deng, Sarda, V., Moreira-Tamayo, O., Mayega, V., Katz, R., Friedman, O., Eliezer, O.E., de-Obaldia, E., Balsara, P.T.
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Sprache:eng
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Zusammenfassung:We present a single-chip fully compliant Bluetooth radio fabricated in a digital 130-nm CMOS process. The transceiver is architectured from the ground up to be compatible with digital deep-submicron CMOS processes and be readily integrated with a digital baseband and application processor. The conventional RF frequency synthesizer architecture, based on the voltage-controlled oscillator and the phase/frequency detector and charge-pump combination, has been replaced with a digitally controlled oscillator and a time-to-digital converter, respectively. The transmitter architecture takes advantage of the wideband frequency modulation capability of the all-digital phase-locked loop with built-in automatic compensation to ensure modulation accuracy. The receiver employs a discrete-time architecture in which the RF signal is directly sampled and processed using analog and digital signal processing techniques. The complete chip also integrates power management functions and a digital baseband processor. Application of the presented ideas has resulted in significant area and power savings while producing structures that are amenable to migration to more advanced deep-submicron processes, as they become available. The entire IC occupies 10 mm/sup 2/ and consumes 28 mA during transmit and 41 mA during receive at 1.5-V supply.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2004.836345