Properties of ZnO/CdS/CuInSe2 solar cells with improved performance

We report the growth and characterization of low‐bandgap record‐efficiency ZnO/CdS/CuInSe2 thin‐film solar cells. The total area conversion efficiency for this cell is 14·5%. This result has been measured and confirmed at the National Renewable Energy Laboratory under standard reporting conditions (...

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Veröffentlicht in:	Progress in photovoltaics 2004-01, Vol.12 (1), p.39-45
Hauptverfasser:	AbuShama, Jehad A. M., Johnston, S., Moriarty, T., Teeter, G., Ramanathan, K., Noufi, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	admittance spectroscopy Applied sciences copper indium diselenide CuInSe2 Energy Equipments, installations and applications Exact sciences and technology grazing-angle incidence Natural energy Photovoltaic conversion photovoltaics Solar cells. Photoelectrochemical cells Solar energy thin-film solar cells three-stage process
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Beschreibung
Zusammenfassung:	We report the growth and characterization of low‐bandgap record‐efficiency ZnO/CdS/CuInSe2 thin‐film solar cells. The total area conversion efficiency for this cell is 14·5%. This result has been measured and confirmed at the National Renewable Energy Laboratory under standard reporting conditions (1000 W/m2, 25°C, AM1·5 Global). The improved performance of the CuInSe2 solar cell is primarily due to a high current density. Material and device characterization data are presented.. Published in 2004 by John Wiley & Sons, Ltd.
ISSN:	1062-7995 1099-159X
DOI:	10.1002/pip.537