Modelling of the influence of charges trapped in the oxide on the I(Vg) characteristics of metal–ultra-thin oxide–semiconductor structures
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| Veröffentlicht in: | Semiconductor science and technology 2004-07, Vol.19 (7), p.877-884 |
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| container_end_page | 884 |
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| container_issue | 7 |
| container_start_page | 877 |
| container_title | Semiconductor science and technology |
| container_volume | 19 |
| creator | Aziz, A Kassmi, K Kassmi, Ka Olivie, F |
| description | |
| doi_str_mv | 10.1088/0268-1242/19/7/017 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0268-1242 |
| ispartof | Semiconductor science and technology, 2004-07, Vol.19 (7), p.877-884 |
| issn | 0268-1242 1361-6641 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_15902241 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Metal-insulator-semiconductor structures (including semiconductor-to-insulator) Physics |
| title | Modelling of the influence of charges trapped in the oxide on the I(Vg) characteristics of metal–ultra-thin oxide–semiconductor structures |
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