Modelling of the influence of charges trapped in the oxide on the I(Vg) characteristics of metal–ultra-thin oxide–semiconductor structures

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Veröffentlicht in:	Semiconductor science and technology 2004-07, Vol.19 (7), p.877-884
Hauptverfasser:	Aziz, A, Kassmi, K, Kassmi, Ka, Olivie, F
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Metal-insulator-semiconductor structures (including semiconductor-to-insulator) Physics
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