Hole Mobility in Cr-Doped p-Type β-FeSi2 Single Crystals

The analysis of mobility in Cr‐doped p‐type β‐FeSi2 single crystals is performed taking into account acoustic, non‐polar and polar optical phonon scattering, scattering by ionised impurities and space charge scattering. The dominant scattering mechanisms are determined. The value of the valence band deformation potential is estimated. The temperature dependence of the Hall coefficient is explained in the limit of a two acceptor–one donor model. The value of the activation energy of the deep acceptors, the concentration of the shallow and deep acceptors as well as the concentration of the compensating donors were estimated.