Multicrystalline LLC-silicon thin film cells on glass

In a one chamber process multicrystalline silicon thin film solar cells with crystallites in the range of 10 to more than 100 /spl mu/m were deposited on uncoated glass by layered laser crystallization (LLC). During PECVD deposition of a-Si:H, laser crystallization was performed in the deposition ch...

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Bibliographische Detailangaben
Hauptverfasser:	Andra, G., Bergmann, J., Ose, E., Schmidt, M., Ngo Duong Sinh, Falk, F.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Argon Crystallization Electrodes Energy Exact sciences and technology Glass Natural energy Photovoltaic cells Photovoltaic conversion Pulsed laser deposition Semiconductor thin films Silicon Solar cells. Photoelectrochemical cells Solar energy Sputtering Transistors
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Beschreibung
Zusammenfassung:	In a one chamber process multicrystalline silicon thin film solar cells with crystallites in the range of 10 to more than 100 /spl mu/m were deposited on uncoated glass by layered laser crystallization (LLC). During PECVD deposition of a-Si:H, laser crystallization was performed in the deposition chamber. A 400 nm thick seed layer simultaneously acting as transparent electrode was crystallized by scanning an Ar/sup +/-laser beam. Epitaxial thickening by applying repeated pulses of an KrF excimer laser was performed during further a-Si:H deposition. p/sup +/-p-n/sup +/ cells with 3 /spl mu/m thick absorber without reflector and without antireflection coating showed V/sub oc/ = 425 mV, I/sub sc/ = 9.8 mA/cm/sup 2/, FF = 55%, and n = 2.3%.
ISSN:	1060-8371
DOI:	10.1109/PVSC.2002.1190849