Microwave PECVD of micro-crystalline silicon

Microwave PECVD of micro-crystalline silicon

The deposition of micro-crystalline silicon with a new linear microwave plasma source is investigated. Advantages of this plasma source are the high deposition rates and the large area on which a homogeneous deposition can be achieved. Since this source has not yet been applied for deposition of mic...

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Hauptverfasser: Soppe, W., Devilee, C., Biebericher, A., Schiermeier, S., Donker, H., Rath, J.K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Applied sciences
Atom optics
Atomic measurements
Crystallization
Energy
Exact sciences and technology
Grain size
Hydrogen
Mass spectroscopy
Natural energy
Optical scattering
Plasma measurements
Raman scattering
Silicon
Solar energy
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Beschreibung
Zusammenfassung:The deposition of micro-crystalline silicon with a new linear microwave plasma source is investigated. Advantages of this plasma source are the high deposition rates and the large area on which a homogeneous deposition can be achieved. Since this source has not yet been applied for deposition of micro-crystalline silicon before, we explored a large parameter space in order to find optimum growth conditions. It is observed that with this microwave source it is possible to grow microcrystalline layers at higher silane/hydrogen ratios and deposition rates than for conventional RF PECVD. In this paper, structural properties of silicon layers deposited by microwave assisted PECVD are discussed.
ISSN:1060-8371
DOI:10.1109/PVSC.2002.1190816