Copper indium diselenide solar cells prepared by electrodeposition

Copper indium diselenide (CIS) layers have been prepared by an electrodeposition based process. The composition, density and adhesion properties of theses films were found to be highly suitable for use as the active layer in a CIS solar cell. After recrystallisation and the completion of the device...

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Hauptverfasser: Guimard, D., Grand, P.P., Bodereau, N., Cowache, P., Guillemoles, J.-F., Lincot, D., Taunier, S., Ben Farah, M., Mogensen, P.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Copper indium diselenide (CIS) layers have been prepared by an electrodeposition based process. The composition, density and adhesion properties of theses films were found to be highly suitable for use as the active layer in a CIS solar cell. After recrystallisation and the completion of the device layer (by the deposition of CdS and ZnO layers), efficiencies as high as 8.8 % were found (total area, 100 MW/cm/sup 2/, no AR coating) for small area devices (0.06 cm/sup 2/). To the best of our knowledge, this is a record efficiency for electrodeposited CIS, without any post additional vacuum deposition process. Promising results have been also obtained on 5/spl times/5 cm/sup 2/ substrates (average efficiency of 4.5 %).
ISSN:1060-8371
DOI:10.1109/PVSC.2002.1190659