Integrated PIN photodiodes in high-performance BiCMOS technology

We attain a PIN photodiode combining high responsivity, fast response and low capacitance in BiCMOS technology. Only a slight process modification, having no verifiable influence on the transistor parameters is necessary. We achieve bandwidths of 625 MHz and 240 MHz at 670 and 780 nm as well as a qu...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Fortsch, M., Zimmermann, H., Einbrodt, W., Bach, K., Pless, H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Anodes Applied sciences Bandwidth BiCMOS integrated circuits Capacitance Cathodes Doping Electronics Epitaxial layers Exact sciences and technology Integrated circuit technology Optoelectronic devices PIN photodiodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We attain a PIN photodiode combining high responsivity, fast response and low capacitance in BiCMOS technology. Only a slight process modification, having no verifiable influence on the transistor parameters is necessary. We achieve bandwidths of 625 MHz and 240 MHz at 670 and 780 nm as well as a quantum efficiency of 96.5%.
DOI:	10.1109/IEDM.2002.1175959