Optimization of a SiGe:C HBT in a BiCMOS technology for low power wireless applications

The performance enhancement of a SiGe:C HBT for RF/IF applications is described for Motorola's 0.35 /spl mu/m and 0.18 /spl mu/m BiCMOS technologies. Cutoff frequencies (f/sub T/) have been improved from 50 GHz to 78/84 GHz (0.35/0.18 /spl mu/m BiCMOS), with a reduction in minimum noise figure...

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Hauptverfasser:	John, J.P., Chai, F., Morgan, D., Keller, T., Kirchgessner, J., Reuter, R., Rueda, H., Teplik, J., White, J., Wipf, S., Zupac, D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences BiCMOS integrated circuits Circuit properties CMOS technology Doping profiles Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Germanium silicon alloys Heterojunction bipolar transistors Isolation technology Laboratories Manufacturing Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Noise figure Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanium Transistors
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Beschreibung
Zusammenfassung:	The performance enhancement of a SiGe:C HBT for RF/IF applications is described for Motorola's 0.35 /spl mu/m and 0.18 /spl mu/m BiCMOS technologies. Cutoff frequencies (f/sub T/) have been improved from 50 GHz to 78/84 GHz (0.35/0.18 /spl mu/m BiCMOS), with a reduction in minimum noise figure (NF) from 0.7 dB to 0.30 dB. Improvements occurred through the optimization of the intrinsic collector and base dopant profiles, extrinsic collector resistance, and device layout.
ISSN:	1088-9299 2378-590X
DOI:	10.1109/BIPOL.2002.1042916