A trench-isolated power BiCMOS process with complementary high performance vertical bipolars

A new process for mixed-signal and power management applications is introduced. The process architecture is designed to achieve high V/sub A/, high f/sub T/ complementary 24 V bipolar devices coupled to 0.5 /spl mu/m CMOS and 24 V power MOS. For optimum performance and die size the process uses 1 /s...

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Bibliographische Detailangaben
Hauptverfasser:	Strachan, A., Sethna, P., Lavrovskaya, N., Yang, R., Dark, C., Coppock, B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences BiCMOS integrated circuits Circuit properties CMOS process Doping Electric, optical and optoelectronic circuits Electronics Energy management Etching Exact sciences and technology Home appliances Implants Low voltage Microelectronic fabrication (materials and surfaces technology) Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits MOS devices Other multijunction devices. Power transistors. Thyristors Process design Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Beschreibung
Zusammenfassung:	A new process for mixed-signal and power management applications is introduced. The process architecture is designed to achieve high V/sub A/, high f/sub T/ complementary 24 V bipolar devices coupled to 0.5 /spl mu/m CMOS and 24 V power MOS. For optimum performance and die size the process uses 1 /spl mu/m wide poly-filled trench isolation.
ISSN:	1088-9299 2378-590X
DOI:	10.1109/BIPOL.2002.1042883