Temperature effects modeling in silicon piezoresistive pressure sensor

Temperature effects and compensation for temperature drift of offset voltage in silicon piezoresistive pressure sensors were analyzed. The derived equations take into account temperature dependences, the piezoresistive effect and thermal expansion of the diaphragm inducing additional stresses. Measu...

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Hauptverfasser:	Aljancic, U., Resnik, D., Vrtacnik, D., Mozek, M., Amon, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Acoustic wave devices, piezoelectric and piezoresistive devices Applied sciences Electronics Equations Exact sciences and technology Performance evaluation Piezoresistance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Stress measurement Temperature dependence Temperature sensors Thermal expansion Thermal stresses Voltage
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Zusammenfassung:	Temperature effects and compensation for temperature drift of offset voltage in silicon piezoresistive pressure sensors were analyzed. The derived equations take into account temperature dependences, the piezoresistive effect and thermal expansion of the diaphragm inducing additional stresses. Measurements performed on fabricated sensors confirm the importance of diaphragm induced thermal stress. Accordingly, a computer program enabling fast calculation of sensor sensitivity and offset voltage was conceived. Based on the analysis, an approach to compensation for temperature drift of offset voltage is proposed and confirmed with experimental results.
DOI:	10.1109/MELECON.2002.1014525