Plasma-enhanced atomic layer deposition of SrTa2O6thin films using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as precursor

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of the Electrochemical Society 2004, Vol.151 (5), p.C292-C286
Hauptverfasser:	SHIN, Woong-Chul, RYU, Sang-Ouk, YOU, In-Kyu, YU, Byoung-Gon, LEE, Won-Jae, CHOI, Kyu-Jeong, YOON, Soon-Gil
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	C286
container_issue	5
container_start_page	C292
container_title	Journal of the Electrochemical Society
container_volume	151
creator	SHIN, Woong-Chul RYU, Sang-Ouk YOU, In-Kyu YU, Byoung-Gon LEE, Won-Jae CHOI, Kyu-Jeong YOON, Soon-Gil
description
format	Article
fullrecord	<record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_15752468</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>15752468</sourcerecordid><originalsourceid>FETCH-pascalfrancis_primary_157524683</originalsourceid><addsrcrecordid>eNqNjr0KwjAURoMoWH_e4S6CDoWmTVqdi9Ktgt1E5FJTjaRJya2Db28RH8Dp8B2-4YxYwHdChhnnfMyCKOJJKFLJp2xG9Bwm34osYM-jQWoxVPaBtlY3wN61ugaDb-XhpjpHutfOgmvg5CuMy7R_aAuNNi3Bi7S9D_5c4brM40Ju5JeizItkc4kBCTqv6pcn5xds0qAhtfxxzlaHfZUXYYdUo2n8EKDp2nndon9fucxkLNJt8u_vA-JKSOQ</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Plasma-enhanced atomic layer deposition of SrTa2O6thin films using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as precursor</title><source>IOP Publishing Journals</source><creator>SHIN, Woong-Chul ; RYU, Sang-Ouk ; YOU, In-Kyu ; YU, Byoung-Gon ; LEE, Won-Jae ; CHOI, Kyu-Jeong ; YOON, Soon-Gil</creator><creatorcontrib>SHIN, Woong-Chul ; RYU, Sang-Ouk ; YOU, In-Kyu ; YU, Byoung-Gon ; LEE, Won-Jae ; CHOI, Kyu-Jeong ; YOON, Soon-Gil</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>CODEN: JESOAN</identifier><language>eng</language><publisher>Pennington, NJ: Electrochemical Society</publisher><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics</subject><ispartof>Journal of the Electrochemical Society, 2004, Vol.151 (5), p.C292-C286</ispartof><rights>2004 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,4012</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15752468$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SHIN, Woong-Chul</creatorcontrib><creatorcontrib>RYU, Sang-Ouk</creatorcontrib><creatorcontrib>YOU, In-Kyu</creatorcontrib><creatorcontrib>YU, Byoung-Gon</creatorcontrib><creatorcontrib>LEE, Won-Jae</creatorcontrib><creatorcontrib>CHOI, Kyu-Jeong</creatorcontrib><creatorcontrib>YOON, Soon-Gil</creatorcontrib><title>Plasma-enhanced atomic layer deposition of SrTa2O6thin films using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as precursor</title><title>Journal of the Electrochemical Society</title><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNqNjr0KwjAURoMoWH_e4S6CDoWmTVqdi9Ktgt1E5FJTjaRJya2Db28RH8Dp8B2-4YxYwHdChhnnfMyCKOJJKFLJp2xG9Bwm34osYM-jQWoxVPaBtlY3wN61ugaDb-XhpjpHutfOgmvg5CuMy7R_aAuNNi3Bi7S9D_5c4brM40Ju5JeizItkc4kBCTqv6pcn5xds0qAhtfxxzlaHfZUXYYdUo2n8EKDp2nndon9fucxkLNJt8u_vA-JKSOQ</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>SHIN, Woong-Chul</creator><creator>RYU, Sang-Ouk</creator><creator>YOU, In-Kyu</creator><creator>YU, Byoung-Gon</creator><creator>LEE, Won-Jae</creator><creator>CHOI, Kyu-Jeong</creator><creator>YOON, Soon-Gil</creator><general>Electrochemical Society</general><scope>IQODW</scope></search><sort><creationdate>2004</creationdate><title>Plasma-enhanced atomic layer deposition of SrTa2O6thin films using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as precursor</title><author>SHIN, Woong-Chul ; RYU, Sang-Ouk ; YOU, In-Kyu ; YU, Byoung-Gon ; LEE, Won-Jae ; CHOI, Kyu-Jeong ; YOON, Soon-Gil</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-pascalfrancis_primary_157524683</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SHIN, Woong-Chul</creatorcontrib><creatorcontrib>RYU, Sang-Ouk</creatorcontrib><creatorcontrib>YOU, In-Kyu</creatorcontrib><creatorcontrib>YU, Byoung-Gon</creatorcontrib><creatorcontrib>LEE, Won-Jae</creatorcontrib><creatorcontrib>CHOI, Kyu-Jeong</creatorcontrib><creatorcontrib>YOON, Soon-Gil</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SHIN, Woong-Chul</au><au>RYU, Sang-Ouk</au><au>YOU, In-Kyu</au><au>YU, Byoung-Gon</au><au>LEE, Won-Jae</au><au>CHOI, Kyu-Jeong</au><au>YOON, Soon-Gil</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Plasma-enhanced atomic layer deposition of SrTa2O6thin films using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as precursor</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>2004</date><risdate>2004</risdate><volume>151</volume><issue>5</issue><spage>C292</spage><epage>C286</epage><pages>C292-C286</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub></addata></record>
fulltext	fulltext
identifier	ISSN: 0013-4651
ispartof	Journal of the Electrochemical Society, 2004, Vol.151 (5), p.C292-C286
issn	0013-4651 1945-7111
language	eng
recordid	cdi_pascalfrancis_primary_15752468
source	IOP Publishing Journals
subjects	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
title	Plasma-enhanced atomic layer deposition of SrTa2O6thin films using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as precursor
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T11%3A49%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Plasma-enhanced%20atomic%20layer%20deposition%20of%20SrTa2O6thin%20films%20using%20Sr%5BTa(OC2H5)5(OC2H4OCH3)%5D2%20as%20precursor&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=SHIN,%20Woong-Chul&rft.date=2004&rft.volume=151&rft.issue=5&rft.spage=C292&rft.epage=C286&rft.pages=C292-C286&rft.issn=0013-4651&rft.eissn=1945-7111&rft.coden=JESOAN&rft_id=info:doi/&rft_dat=%3Cpascalfrancis%3E15752468%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true