A 1.8-V operation RFCMOS transceiver for Bluetooth

This paper describes a single-chip Bluetooth transceiver LSI, which uses a standard 0.18 /spl mu/m bulk CMOS process. It can operate at a supply voltage of 1.8 V, and includes even a low loss transmit/receive antenna switch (SW) in order to realize high level integration. For lower chip area, a chan...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Komurasaki, H., Heima, T., Miwa, T., Yamamoto, K., Wakada, H., Yasui, I., Ono, M., Sano, T., Sato, H., Miki, T., Kato, N.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Band pass filters Baseband Bluetooth Circuit properties CMOS process CMOS technology Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Energy consumption Exact sciences and technology Integrated circuits Radio frequency Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Switching, multiplexing, switched capacity circuits Transceivers Transmitting antennas Voltage
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	This paper describes a single-chip Bluetooth transceiver LSI, which uses a standard 0.18 /spl mu/m bulk CMOS process. It can operate at a supply voltage of 1.8 V, and includes even a low loss transmit/receive antenna switch (SW) in order to realize high level integration. For lower chip area, a channel selection filter consists of simple linearized source-coupled pairs, and the transceiver occupies 10.2 mm/sup 2/.
DOI:	10.1109/VLSIC.2002.1015092