Gallium arsenide and silicon FET-type switches for repetitive pulsed power applications

Repetitive pulsed-power generators with nanosecond rise times and multi-kilovolt outputs commonly employ silicon MOSFET switches. Gallium arsenide FET switches hold the promise of faster operation, higher voltage hold-off, and greater current densities. The realization of this promise requires an un...

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Bibliographische Detailangaben

Hauptverfasser:	Xianyue Gu, Myles, C.W., Kuthi, A., Shui, Q., Gundersen, M.A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Current density Electrical engineering. Electrical power engineering Exact sciences and technology FETs Gallium arsenide Leakage current MOSFET circuits Power dissipation Power electronics, power supplies Pulse generation Silicon Switches Voltage
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