Gallium arsenide and silicon FET-type switches for repetitive pulsed power applications
Repetitive pulsed-power generators with nanosecond rise times and multi-kilovolt outputs commonly employ silicon MOSFET switches. Gallium arsenide FET switches hold the promise of faster operation, higher voltage hold-off, and greater current densities. The realization of this promise requires an un...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | Repetitive pulsed-power generators with nanosecond rise times and multi-kilovolt outputs commonly employ silicon MOSFET switches. Gallium arsenide FET switches hold the promise of faster operation, higher voltage hold-off, and greater current densities. The realization of this promise requires an understanding of the physical and practical limits of Si- and GaAs-based devices. In this paper, the results of ATLAS simulations on a Si MOSFET and on a GaAs SIT are presented. The results show that GaAs-based devices are superior to those based on Si in terms of switching speeds and power dissipation, but that they have a relatively higher leakage current. |
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ISSN: | 1076-8467 |
DOI: | 10.1109/MODSYM.2002.1189508 |