Gallium arsenide and silicon FET-type switches for repetitive pulsed power applications
Repetitive pulsed-power generators with nanosecond rise times and multi-kilovolt outputs commonly employ silicon MOSFET switches. Gallium arsenide FET switches hold the promise of faster operation, higher voltage hold-off, and greater current densities. The realization of this promise requires an un...
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| creator | Xianyue Gu Myles, C.W. Kuthi, A. Shui, Q. Gundersen, M.A. |
| description | Repetitive pulsed-power generators with nanosecond rise times and multi-kilovolt outputs commonly employ silicon MOSFET switches. Gallium arsenide FET switches hold the promise of faster operation, higher voltage hold-off, and greater current densities. The realization of this promise requires an understanding of the physical and practical limits of Si- and GaAs-based devices. In this paper, the results of ATLAS simulations on a Si MOSFET and on a GaAs SIT are presented. The results show that GaAs-based devices are superior to those based on Si in terms of switching speeds and power dissipation, but that they have a relatively higher leakage current. |
| doi_str_mv | 10.1109/MODSYM.2002.1189508 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>pascalfrancis_6IE</sourceid><recordid>TN_cdi_pascalfrancis_primary_15669741</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1189508</ieee_id><sourcerecordid>15669741</sourcerecordid><originalsourceid>FETCH-LOGICAL-i118t-b147311f0ab5a18c960b0e85c1320dff561f112c3d8cb3e33a41976841f89143</originalsourceid><addsrcrecordid>eNpFUE1LAzEUDKhgqf0FveTicet7m83XUapWoaUHC-KpZLMJRra7YbO19N8bqOBj4MHMvOExhMwRFoigHzbbp_fPzaIEKDOhNAd1RWZaKshgklcgrskEQYpCVULekllK35CHgwReTsjHyrRtOB6oGZLrQuOo6RqaQhts39GX510xnqOj6RRG--US9f1ABxfdGMbw42g8tsk1NPYnN1ATYz4zY-i7dEduvMna7G9PyS6HLV-L9Xb1tnxcFyG_OxY1VpIhejA1N6isFlCDU9wiK6Hxngv0iKVljbI1c4yZCrUUqkKvNFZsSu4vsdEka1o_mM6GtI9DOJjhvEcuhJYVZt_84gvOuX_50hj7BWG2X4E</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Gallium arsenide and silicon FET-type switches for repetitive pulsed power applications</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Xianyue Gu ; Myles, C.W. ; Kuthi, A. ; Shui, Q. ; Gundersen, M.A.</creator><creatorcontrib>Xianyue Gu ; Myles, C.W. ; Kuthi, A. ; Shui, Q. ; Gundersen, M.A.</creatorcontrib><description>Repetitive pulsed-power generators with nanosecond rise times and multi-kilovolt outputs commonly employ silicon MOSFET switches. Gallium arsenide FET switches hold the promise of faster operation, higher voltage hold-off, and greater current densities. The realization of this promise requires an understanding of the physical and practical limits of Si- and GaAs-based devices. In this paper, the results of ATLAS simulations on a Si MOSFET and on a GaAs SIT are presented. The results show that GaAs-based devices are superior to those based on Si in terms of switching speeds and power dissipation, but that they have a relatively higher leakage current.</description><identifier>ISSN: 1076-8467</identifier><identifier>ISBN: 9780780375406</identifier><identifier>ISBN: 0780375408</identifier><identifier>DOI: 10.1109/MODSYM.2002.1189508</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Applied sciences ; Current density ; Electrical engineering. Electrical power engineering ; Exact sciences and technology ; FETs ; Gallium arsenide ; Leakage current ; MOSFET circuits ; Power dissipation ; Power electronics, power supplies ; Pulse generation ; Silicon ; Switches ; Voltage</subject><ispartof>Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop, 2002, p.437-440</ispartof><rights>2004 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1189508$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,4036,4037,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1189508$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15669741$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Xianyue Gu</creatorcontrib><creatorcontrib>Myles, C.W.</creatorcontrib><creatorcontrib>Kuthi, A.</creatorcontrib><creatorcontrib>Shui, Q.</creatorcontrib><creatorcontrib>Gundersen, M.A.</creatorcontrib><title>Gallium arsenide and silicon FET-type switches for repetitive pulsed power applications</title><title>Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop</title><addtitle>MODSYM</addtitle><description>Repetitive pulsed-power generators with nanosecond rise times and multi-kilovolt outputs commonly employ silicon MOSFET switches. Gallium arsenide FET switches hold the promise of faster operation, higher voltage hold-off, and greater current densities. The realization of this promise requires an understanding of the physical and practical limits of Si- and GaAs-based devices. In this paper, the results of ATLAS simulations on a Si MOSFET and on a GaAs SIT are presented. The results show that GaAs-based devices are superior to those based on Si in terms of switching speeds and power dissipation, but that they have a relatively higher leakage current.</description><subject>Applied sciences</subject><subject>Current density</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>Gallium arsenide</subject><subject>Leakage current</subject><subject>MOSFET circuits</subject><subject>Power dissipation</subject><subject>Power electronics, power supplies</subject><subject>Pulse generation</subject><subject>Silicon</subject><subject>Switches</subject><subject>Voltage</subject><issn>1076-8467</issn><isbn>9780780375406</isbn><isbn>0780375408</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFUE1LAzEUDKhgqf0FveTicet7m83XUapWoaUHC-KpZLMJRra7YbO19N8bqOBj4MHMvOExhMwRFoigHzbbp_fPzaIEKDOhNAd1RWZaKshgklcgrskEQYpCVULekllK35CHgwReTsjHyrRtOB6oGZLrQuOo6RqaQhts39GX510xnqOj6RRG--US9f1ABxfdGMbw42g8tsk1NPYnN1ATYz4zY-i7dEduvMna7G9PyS6HLV-L9Xb1tnxcFyG_OxY1VpIhejA1N6isFlCDU9wiK6Hxngv0iKVljbI1c4yZCrUUqkKvNFZsSu4vsdEka1o_mM6GtI9DOJjhvEcuhJYVZt_84gvOuX_50hj7BWG2X4E</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Xianyue Gu</creator><creator>Myles, C.W.</creator><creator>Kuthi, A.</creator><creator>Shui, Q.</creator><creator>Gundersen, M.A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>IQODW</scope></search><sort><creationdate>2002</creationdate><title>Gallium arsenide and silicon FET-type switches for repetitive pulsed power applications</title><author>Xianyue Gu ; Myles, C.W. ; Kuthi, A. ; Shui, Q. ; Gundersen, M.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i118t-b147311f0ab5a18c960b0e85c1320dff561f112c3d8cb3e33a41976841f89143</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Applied sciences</topic><topic>Current density</topic><topic>Electrical engineering. Electrical power engineering</topic><topic>Exact sciences and technology</topic><topic>FETs</topic><topic>Gallium arsenide</topic><topic>Leakage current</topic><topic>MOSFET circuits</topic><topic>Power dissipation</topic><topic>Power electronics, power supplies</topic><topic>Pulse generation</topic><topic>Silicon</topic><topic>Switches</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Xianyue Gu</creatorcontrib><creatorcontrib>Myles, C.W.</creatorcontrib><creatorcontrib>Kuthi, A.</creatorcontrib><creatorcontrib>Shui, Q.</creatorcontrib><creatorcontrib>Gundersen, M.A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Xianyue Gu</au><au>Myles, C.W.</au><au>Kuthi, A.</au><au>Shui, Q.</au><au>Gundersen, M.A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Gallium arsenide and silicon FET-type switches for repetitive pulsed power applications</atitle><btitle>Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop</btitle><stitle>MODSYM</stitle><date>2002</date><risdate>2002</risdate><spage>437</spage><epage>440</epage><pages>437-440</pages><issn>1076-8467</issn><isbn>9780780375406</isbn><isbn>0780375408</isbn><abstract>Repetitive pulsed-power generators with nanosecond rise times and multi-kilovolt outputs commonly employ silicon MOSFET switches. Gallium arsenide FET switches hold the promise of faster operation, higher voltage hold-off, and greater current densities. The realization of this promise requires an understanding of the physical and practical limits of Si- and GaAs-based devices. In this paper, the results of ATLAS simulations on a Si MOSFET and on a GaAs SIT are presented. The results show that GaAs-based devices are superior to those based on Si in terms of switching speeds and power dissipation, but that they have a relatively higher leakage current.</abstract><cop>Piscataway NJ</cop><pub>IEEE</pub><doi>10.1109/MODSYM.2002.1189508</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1076-8467 |
| ispartof | Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop, 2002, p.437-440 |
| issn | 1076-8467 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_15669741 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Applied sciences Current density Electrical engineering. Electrical power engineering Exact sciences and technology FETs Gallium arsenide Leakage current MOSFET circuits Power dissipation Power electronics, power supplies Pulse generation Silicon Switches Voltage |
| title | Gallium arsenide and silicon FET-type switches for repetitive pulsed power applications |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T00%3A35%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Gallium%20arsenide%20and%20silicon%20FET-type%20switches%20for%20repetitive%20pulsed%20power%20applications&rft.btitle=Conference%20Record%20of%20the%20Twenty-Fifth%20International%20Power%20Modulator%20Symposium,%202002%20and%202002%20High-Voltage%20Workshop&rft.au=Xianyue%20Gu&rft.date=2002&rft.spage=437&rft.epage=440&rft.pages=437-440&rft.issn=1076-8467&rft.isbn=9780780375406&rft.isbn_list=0780375408&rft_id=info:doi/10.1109/MODSYM.2002.1189508&rft_dat=%3Cpascalfrancis_6IE%3E15669741%3C/pascalfrancis_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1189508&rfr_iscdi=true |