Gallium nitride: use in high power control applications

The use of gallium nitride field effect transistors in microwave and RF control applications is discussed. A control model for the FET is presented and used to predict on-state resistance, off-state capacitance and switch cutoff frequency. The effects of the gate bias circuit and high power operatio...

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Hauptverfasser:	Caverly, R.H., Drozdovski, N.V., Joye, C., Quinn, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Capacitance Circuit properties Circuits Cutoff frequency Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gallium nitride III-V semiconductor materials Microwave FETs Power control Predictive models Radio frequency Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Switches Switching, multiplexing, switched capacity circuits Transistors
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Beschreibung
Zusammenfassung:	The use of gallium nitride field effect transistors in microwave and RF control applications is discussed. A control model for the FET is presented and used to predict on-state resistance, off-state capacitance and switch cutoff frequency. The effects of the gate bias circuit and high power operation on on-state resistance are also presented.
ISSN:	1064-7775 2379-5638
DOI:	10.1109/GAAS.2002.1049045