The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN

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Veröffentlicht in:	Semiconductor science and technology 2004-03, Vol.19 (3), p.427-432
Hauptverfasser:	Zanato, D, Gokden, S, Balkan, N, Ridley, B K, Schaff, W J
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Thin films and multilayers
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