Electromigration study of Al and Cu metallization using WLR isothermal method

Wafer level electromigration behavior of copper and aluminum using isothermal stress was investigated in this paper. Lifetime, lognormal standard deviation, and activation energy were evaluated as a function of stress temperature as well as line width. Temperature dependence of the embedded 2D therm...

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Hauptverfasser:	Lee, T.C., Ruprecht, M., Tibel, D., Sullivan, T.D., Shengming Wen
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Acceleration Aluminum Applied sciences Copper Electromigration Electronics Exact sciences and technology Interfaces Isothermal processes Metallization Microelectronic fabrication (materials and surfaces technology) Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature dependence Testing, measurement, noise and reliability Thermal resistance Thermal stresses
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Zusammenfassung:	Wafer level electromigration behavior of copper and aluminum using isothermal stress was investigated in this paper. Lifetime, lognormal standard deviation, and activation energy were evaluated as a function of stress temperature as well as line width. Temperature dependence of the embedded 2D thermal behavior was modeled via the initial stress current versus the initial resistance correlations. The mass transport mechanisms in the highly accelerated wafer level electromigration were observed to be the same as those in moderately accelerated conventional package level electromigration for both Cu-based and Al-based systems.
DOI:	10.1109/RELPHY.2002.996656