Novel ESD protection structure with embedded SCR LDMOS for smart power technology

In this paper, a new robust ESD protection structure has been proposed for smart power technology. By inserting a P+ diffusion into the drain region of 40 V-LDMOS power transistor, the embedded SCR (ESCR-LDMOS) device can be built and without changing any DC I-V characteristics of a 40 V-LDMOS power...

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Hauptverfasser:	Jian-Hsing Lee, Shih, J.R., Tang, C.S., Liu, K.C., Wu, Y.H., Shiue, R.Y., Ong, T.C., Peng, Y.K., Yue, J.T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Current distribution Current measurement Design. Technologies. Operation analysis. Testing Electrical engineering. Electrical power engineering Electronics Electrostatic discharge Exact sciences and technology Integrated circuits Other multijunction devices. Power transistors. Thyristors Performance evaluation Power electronics, power supplies Power transistors Protection Pulse measurements Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stress Thyristors Voltage
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Beschreibung
Zusammenfassung:	In this paper, a new robust ESD protection structure has been proposed for smart power technology. By inserting a P+ diffusion into the drain region of 40 V-LDMOS power transistor, the embedded SCR (ESCR-LDMOS) device can be built and without changing any DC I-V characteristics of a 40 V-LDMOS power transistor. It is also found that the method with P+ strap inserted into drain region (N+ in NW) can improve the ESD failure threshold from 1 kV to 6 kV for HBM and from 100 V to 350 V for MM.
DOI:	10.1109/RELPHY.2002.996629