Comparative investigation of plating conditions on self-annealing of electrochemically deposited copper films

This paper discusses the effects of chemistries and plating conditions on the self-annealing or recrystallization of electrochemically deposited copper films. Current density, plating temperature and the concentrations of the organic additives were found to strongly affect self-annealing of the copp...

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Hauptverfasser:	Ritzdorf, T., Chen, L., Fulton, D., Dundas, C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Additives Annealing Applied sciences Chemistry Copper Current density Design. Technologies. Operation analysis. Testing Drives Electrical resistance measurement Electronics Exact sciences and technology Integrated circuits Manufacturing processes Metallization, contacts, interconnects device isolation Microelectronic fabrication (materials and surfaces technology) Microelectronics: LSI, VLSI, ULSI integrated circuit fabrication technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor films Temperature
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Zusammenfassung:	This paper discusses the effects of chemistries and plating conditions on the self-annealing or recrystallization of electrochemically deposited copper films. Current density, plating temperature and the concentrations of the organic additives were found to strongly affect self-annealing of the copper films. The results show that copper films deposited at higher current densities, higher concentrations of organic additives or at lower plating temperatures take less time to complete self-annealing at room temperature.
DOI:	10.1109/IITC.1999.787146