CVD TaN barrier for copper metallization and DRAM bottom electrode

The extendibility of PVD barriers is expected to become a limiting factor for 0.13 /spl mu/m copper metallization, and an MOCVD barrier is likely to be indispensable due to its superior conformality. A 400/spl deg/C process for deposition of a nanocrystalline conformal (>85%) MOCVD TaN layer in h...

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Hauptverfasser: Paranjpe, A., Bubber, R., Velo, L., Shang, G., Gopinath, S., Dalton, J., Moslehi, M.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:The extendibility of PVD barriers is expected to become a limiting factor for 0.13 /spl mu/m copper metallization, and an MOCVD barrier is likely to be indispensable due to its superior conformality. A 400/spl deg/C process for deposition of a nanocrystalline conformal (>85%) MOCVD TaN layer in high aspect ratio (AR>5) trenches/vias with barrier properties equivalent to c-PVD TaN has been developed using a liquid organometallic precursor. This enables barrier thickness to be scaled to 250 /spl Aring/ for i-PVD TaN. Resistivity of /spl sim/1000 /spl mu//spl Omega/-cm has been achieved, which can be further reduced through barrier engineering. MOCVD TaN is a key enabler for extendibility of copper metallization to the sub-0.13 /spl mu/m technology node.
DOI:10.1109/IITC.1999.787096