Effect of tilt angle variations in a halo implant on Vth values for 0.14-μm CMOS devices

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Veröffentlicht in:	IEEE transactions on semiconductor manufacturing 2003-11, Vol.16 (4), p.653-655
Hauptverfasser:	SANTIESTEBAN, Ramon S, ABELN, Glenn C, BEATTY, Timothy E, RODRIGUEZ, Osvaldo
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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container_end_page	655
container_issue	4
container_start_page	653
container_title	IEEE transactions on semiconductor manufacturing
container_volume	16
creator	SANTIESTEBAN, Ramon S ABELN, Glenn C BEATTY, Timothy E RODRIGUEZ, Osvaldo
description
doi_str_mv	10.1109/TSM.2003.818958
format	Article
fullrecord	<record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_15246283</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>15246283</sourcerecordid><originalsourceid>FETCH-LOGICAL-p98t-94d529b10f33ea154090d133a57633870d4bb6650d653986651f28681dab306c3</originalsourceid><addsrcrecordid>eNotjs1Kw0AURgdRsFbXbu_GZeqdzE9mllLqD7R00SC4KjfJjB2ZJiETC76bz-AzGdDV9y0Oh8PYLccF52jvy91mkSOKheHGKnPGZlwpk-VCqnM2Q2NlphUWl-wqpQ9ELqUtZuxt5b2rR-g8jCGOQO17dHCiIdAYujZBaIHgQLGDcOwjtRPawut4mJj46RL4boCpQGY_30dYbrY7aNwp1C5dswtPMbmb_52z8nFVLp-z9fbpZfmwznprxszKRuW24uiFcMSVRIsNF4JUoYUwBTayqvQU3mglrJke97nRhjdUCdS1mLO7P21PqaboB2rrkPb9EI40fO25yqXOjRC_AqBSXg</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effect of tilt angle variations in a halo implant on Vth values for 0.14-μm CMOS devices</title><source>IEEE Electronic Library (IEL)</source><creator>SANTIESTEBAN, Ramon S ; ABELN, Glenn C ; BEATTY, Timothy E ; RODRIGUEZ, Osvaldo</creator><creatorcontrib>SANTIESTEBAN, Ramon S ; ABELN, Glenn C ; BEATTY, Timothy E ; RODRIGUEZ, Osvaldo</creatorcontrib><identifier>ISSN: 0894-6507</identifier><identifier>EISSN: 1558-2345</identifier><identifier>DOI: 10.1109/TSM.2003.818958</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>IEEE transactions on semiconductor manufacturing, 2003-11, Vol.16 (4), p.653-655</ispartof><rights>2004 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15246283$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SANTIESTEBAN, Ramon S</creatorcontrib><creatorcontrib>ABELN, Glenn C</creatorcontrib><creatorcontrib>BEATTY, Timothy E</creatorcontrib><creatorcontrib>RODRIGUEZ, Osvaldo</creatorcontrib><title>Effect of tilt angle variations in a halo implant on Vth values for 0.14-μm CMOS devices</title><title>IEEE transactions on semiconductor manufacturing</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0894-6507</issn><issn>1558-2345</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNotjs1Kw0AURgdRsFbXbu_GZeqdzE9mllLqD7R00SC4KjfJjB2ZJiETC76bz-AzGdDV9y0Oh8PYLccF52jvy91mkSOKheHGKnPGZlwpk-VCqnM2Q2NlphUWl-wqpQ9ELqUtZuxt5b2rR-g8jCGOQO17dHCiIdAYujZBaIHgQLGDcOwjtRPawut4mJj46RL4boCpQGY_30dYbrY7aNwp1C5dswtPMbmb_52z8nFVLp-z9fbpZfmwznprxszKRuW24uiFcMSVRIsNF4JUoYUwBTayqvQU3mglrJke97nRhjdUCdS1mLO7P21PqaboB2rrkPb9EI40fO25yqXOjRC_AqBSXg</recordid><startdate>200311</startdate><enddate>200311</enddate><creator>SANTIESTEBAN, Ramon S</creator><creator>ABELN, Glenn C</creator><creator>BEATTY, Timothy E</creator><creator>RODRIGUEZ, Osvaldo</creator><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope></search><sort><creationdate>200311</creationdate><title>Effect of tilt angle variations in a halo implant on Vth values for 0.14-μm CMOS devices</title><author>SANTIESTEBAN, Ramon S ; ABELN, Glenn C ; BEATTY, Timothy E ; RODRIGUEZ, Osvaldo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p98t-94d529b10f33ea154090d133a57633870d4bb6650d653986651f28681dab306c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SANTIESTEBAN, Ramon S</creatorcontrib><creatorcontrib>ABELN, Glenn C</creatorcontrib><creatorcontrib>BEATTY, Timothy E</creatorcontrib><creatorcontrib>RODRIGUEZ, Osvaldo</creatorcontrib><collection>Pascal-Francis</collection><jtitle>IEEE transactions on semiconductor manufacturing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SANTIESTEBAN, Ramon S</au><au>ABELN, Glenn C</au><au>BEATTY, Timothy E</au><au>RODRIGUEZ, Osvaldo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of tilt angle variations in a halo implant on Vth values for 0.14-μm CMOS devices</atitle><jtitle>IEEE transactions on semiconductor manufacturing</jtitle><date>2003-11</date><risdate>2003</risdate><volume>16</volume><issue>4</issue><spage>653</spage><epage>655</epage><pages>653-655</pages><issn>0894-6507</issn><eissn>1558-2345</eissn><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1109/TSM.2003.818958</doi><tpages>3</tpages></addata></record>
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ispartof	IEEE transactions on semiconductor manufacturing, 2003-11, Vol.16 (4), p.653-655
issn	0894-6507 1558-2345
language	eng
recordid	cdi_pascalfrancis_primary_15246283
source	IEEE Electronic Library (IEL)
subjects	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
title	Effect of tilt angle variations in a halo implant on Vth values for 0.14-μm CMOS devices
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T11%3A11%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20tilt%20angle%20variations%20in%20a%20halo%20implant%20on%20Vth%20values%20for%200.14-%CE%BCm%20CMOS%20devices&rft.jtitle=IEEE%20transactions%20on%20semiconductor%20manufacturing&rft.au=SANTIESTEBAN,%20Ramon%20S&rft.date=2003-11&rft.volume=16&rft.issue=4&rft.spage=653&rft.epage=655&rft.pages=653-655&rft.issn=0894-6507&rft.eissn=1558-2345&rft_id=info:doi/10.1109/TSM.2003.818958&rft_dat=%3Cpascalfrancis%3E15246283%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true